Yesterday, Samsung Electronics had announced a new 3D IC packaging technology called eXtended-Cube, or “X-Cube”, allowing chip-stacking of SRAM dies on top of a base logic die through TSVs. Current TSV deployments in the industry mostly come in the form of stacking memory dies on top of a memory controller die in high-bandwidth-memory (HBM) modules that are then integrated with more complex packaging technologies, such as silicon interposers, which we see in today’s high-end GPUs and FPGAs, or through other complex packaging such as Intel’s EMIB. Samsung’s X-Cube is quite different to these existing technologies in that it does away with intermediary interposers or silicon bridges, and directly connects a stacked chip on top of the primary logic die of a design. Samsung has built a 7nm...
Lite-On (including its consumer SSD brand Plextor) is one of the largest SSD vendors that is not vertically integrated. They don't manufacture NAND flash memory and don't design their...1 by Billy Tallis on 8/25/2017
Toshiba on Wednesday introduced its first BiCS 3D TLC NAND flash chips with 512 GB and 1 TB capacities. . The new ICs stack 8 or 16 3D NAND...6 by Anton Shilov on 7/14/2017