FinFET

When GlobalFoundries abandoned development of its 7 nm-class process technology in 2018 and refocused on specialty process technologies, it ceased pathfinding, research, and development of all technologies related to bleeding-edge sub-10nm nodes. At the time, this was the correct (and arguably only) move for the company, which was bleeding money and trailing behind both TSMC and Samsung in the bleeding-edge node race. But in the competitive fab market, that trade-off for reduced investment was going to eventually have consequences further down the road, and it looks like those consequences are finally starting to impact the company. In a recent earnings call, GlobalFoundries disclosed that some of the company's clients are leaving for other foundries, as they adopt sub-10nm technologies faster than GlobalFoundries expected. "Our communications...

Intel Teams Up with UMC for 12nm Fab Node at IFS

Intel and UMC on Thursday said they had entered into an agreement to jointly to develop a 12 nm photolithography process for high-growth markets such as mobile, communication infrastructure...

12 by Anton Shilov on 1/25/2024

TSMC Establishes Joint Venture to Build 12nm/16nm Fab in Europe

TSMC on Tuesday announced plans to establish a European Semiconductor Manufacturing Company (ESMC) joint venture with its partners Bosch, Infineon, and NXP to build a fab near Dresden, Germany...

10 by Anton Shilov on 8/8/2023

Samsung Foundry’s New 17nm Node: 17LPV brings FinFET to 28nm

Despite most discussion about chip manufacturing focusing on the leading edge and blazingly fast and complex side of the industry, the demand for the ‘legacy’ process technologies is also...

11 by Dr. Ian Cutress on 10/6/2021

TSMC Updates on Node Availability Beyond Logic: Analog, HV, Sensors, RF

Most of the time when we speak about semiconductor processes, we are focused on the leading edge of what is possible. Almost exclusively that leading edge is designed for...

3 by Dr. Ian Cutress on 8/25/2020

SMIC Begins Volume Production of 14 nm FinFET Chips: China’s First FinFET Line

SMIC has started volume production of chips using its 14 nm FinFET manufacturing technology. The largest contract maker of semiconductors in China is the first company in the country...

15 by Anton Shilov on 11/14/2019

SMIC: 14nm FinFET in Risk Production; China's First FinFET Line To Contribute Revenue by Late 2019

SMIC, the largest contract maker of semiconductors in China, announced this month that it would start commercial production of chips using its 14 nm FinFET manufacturing technology by the...

53 by Anton Shilov on 8/16/2019

Samsung to Pay $400 Million for Infringing FinFET Patent

A federal jury in Texas ordered Samsung Electronics to pay $400 million to a South Korean university for infringing one of fundamental patents related to double gate FinFET transistors...

33 by Anton Shilov on 6/19/2018

GlobalFoundries to Expand Capacities, Build a Fab in China

GlobalFoundries has announced plans to expand manufacturing capacities for its leading edge and mainstream production technologies in the U.S., Germany and Singapore. After the upgrades of the fabs are...

49 by Anton Shilov on 2/11/2017

Log in

Don't have an account? Sign up now